Wireless Bipolar Power Transistor, 45W
1805 - 1880 MHz
Features
NPN Silicon Microwave Power Transistor
Common Emitter Class AI3 Operation
Internal Input and Output Impedance Matching
Diffused Emitter Ballasting
Gold Metalization System
-(22.95)
PHl819-45
900
Vl .oo
.175=.315
(4.455.3a)
Absblute Maximum Ratings at 25擄C
Parameter
Collector-Emitter Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
Symbol
V
CES
VCES
V
EBO
Ic
PO
TJ
T ST0
8JC
Rating
25
65
3.0
5.5
loo
200
-65
to ~200
Units
V
V
V
A
w
鈥淐
鈥渃
J!
.157r.o10
r(4.24t.251
.003L.rlOl
(.08=.03)1
鈥淐PA
UNLCSS
GTHCRWISE
NOTED.
TOLERANCCS
ARE
IK-JES
cMILLIYETrRS
2.005'
=,13HM>
Electrical Characteristics at 25擄C
Parameter
Power Gain
Collector Efficiency
Input Return Loss
L
Load Mismatch Tolerance
Symbol
GP
%
Min
8
40
10
-
Max
-
-
-
3:l
Units
dB
%
dB
-
lest Conditions
V,,=25 V, lo=200 mA, P,e45
W, F=l805,1880 MHz
V,c=25 V. lo=200 mA. PO,=45
W,
F=l805,1880 MHz
v,,=25 V, I,,=200 mA, PO,=45 W. F=1805.1880 MHz
v,,=25 V, I,,=200 mA, PO,=45 W, F=l805,1880 MHz
RL
VSWR-T
Broadband Test Fixture ImDedances
F(MHz)
1805
I
TEST
=IXTURE
TZST
FIXTURE
z,,(n)
2.0 - j3.8
I
2.0 - j3.8
2.0 - j3.7
I
z&3
3.7 - jl.4
3.9 - jl.8
3.9 - j2.1
I
1
la50
I
1880
1
2
