=_
F鈥橢
an
AMP
company
Wireless Bipolar Power Transistor,
1.45 - 1.60 GHz
Features
l
l
l
l
l
l
1OW
PHl516-10
v2.00
IzS
Designed for Cellular Base Station Applications
Class AB:
-33
dBc Typ 3rd IMD at 10 Watts PEP
Class A:
+49
dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting
Absolute Maximum Ratings at 25擄C
UNLESS
UTHERVISE
NOTED,
TOLERANCES
ARE
INCHES
<umERS
MO5
t13Mn,
Electrical Characteristics
at 25擄C
DC Forward Current Gain
Power Gain
Collector Eff iciency
Input Return Loss
Load Mismatch
Tolerance
3rd Order IMD
h
FE
GP
%
15
10
40
10
120
-
-
-
3.011
-30
-
dB
%
dB
-
dBc
V,,=5 V, I,=1 A
V,,=25
V,,=25
V,,=25
V,,=25
V,,=25
V, I,,=100
V, I,,=100
mA, POUT=1 W, F=l.50
0
mA, P,*lO
- 1.60
GHz
W, F=l SO - 1.60
GHz
W, F=l.50
W, F=l.50
- 1.60 GHz
- 1.60
GHz
RL
V, I,,=1 00 mA, P,,=lO
V. l,glOO
V, I,,=100
mA, P,,,=lO
mA, P,+O
VSWR
IMD,
-
-
W PEP F=1500 MHz, AF=lOO kHz
Typical Device Impedances
F&Hz)
1.50
1.55
1.60
q.J(Q)
1.4 + j4.8
2.0 + j5.0
2.5 + j4.9
r
z LO4D
Specifications
Subject
to Change
Without
Notice.
9-150
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
m Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
M/A-COM,
Europe:
Inc.
Tel. i-44 (1344) 869 595
Fax +44 (1344) 300 020