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AMP
company
Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty
1.2 - 1.4 GHz
PH=l214=3L
Features
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NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
Matrix Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic ~MetaUCeramic Package
Absolute Maximum Ratings at 25擄C
UNLLSS
O-HZRVISE
NZTEJ.
TOLERANCES
ARE
:HILLI~ETERS
t,13MM)
Broadband Test Fixture Impedances
F(GHz)
1.20
1.30
1.40
Z,,(Q)
9.4 - j7.8
8.8 - j7.3
8.1 - j7.2
z,,K4
8.5 + jS.9
9.2 + j4.9
5.3 + j4.7
-
-
j
1
YES-
FIXTURE
TEST
FIXTURE
Ci鈥檌cTT
1
50R
ZIFJ
1
Specifications Subject to Change Without Notice.
9-116
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
=
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
Europe:
M/A-COM,
Inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020