PHKD13N03LT
M3D315
Dual TrenchMOS鈩?logic level FET
Rev. 01 鈥?23 June 2003
Product data
1. Product pro鏗乴e
1.1 Description
Dual N-channel enhancement mode 鏗乪ld-effect transistor in a plastic package using
TrenchMOS鈩?technology.
Product availability:
PHKD13N03LT in SOT96-1 (SO8).
1.2 Features
s
Low gate charge
s
Low on-state resistance
s
Surface mount package
s
Fast switching.
1.3 Applications
s
Portable appliances
s
Lithium-ion battery chargers
s
Notebook computers
s
DC-to-DC converters.
1.4 Quick reference data
s
V
DS
鈮?/div>
30 V
s
P
tot
鈮?/div>
3.57 W
s
I
D
鈮?/div>
10.4 A
s
R
DSon
鈮?/div>
20 m鈩?/div>
2. Pinning information
Table 1:
Pin
1
2
3
4
5,6
7,8
Pinning - SOT96-1 (SO8), simpli鏗乪d outline and symbol
Description
source1 (s1)
gate1 (g1)
source2 (s2)
gate2 (g2)
drain2 (d2)
drain1 (d1)
1
Top view
4
MBK187
Simpli鏗乪d outline
8
5
Symbol
d1 d1
d2 d2
SOT96-1 (SO8)
s1
g
1
s2
g
2
MBK725
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