PHK12NQ10T
TrenchMOS鈩?standard level FET
M3D315
Rev. 01 鈥?15 September 2003
Product data
1. Product pro鏗乴e
1.1 Description
N-channel enhancement mode 鏗乪ld-effect transistor in a plastic package using
TrenchMOS鈩?technology.
1.2 Features
s
Surface mounting package
s
Low on-state resistance.
1.3 Applications
s
DC-to-DC converter primary side
s
Portable equipment applications.
1.4 Quick reference data
s
V
DS
鈮?/div>
100 V
s
P
tot
鈮?/div>
8.9 W
s
I
D
鈮?/div>
11.6 A
s
R
DSon
鈮?/div>
28 m鈩?/div>
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1 (SO8), simpli鏗乪d outline and symbol
Description
source (s)
gate (g)
drain (d)
g
1
Top view
4
MBK187
Simpli鏗乪d outline
8
5
Symbol
d
MBB076
s
SOT96-1 (SO8)
next
PHK12NQ10T相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TrenchMOS standard level FET
PHILIPS
-
英文版
TrenchMOS standard level FET
PHILIPS [P...
-
英文版
TrenchMOS logic level FET
PHILIPS
-
英文版
TrenchMOS logic level FET
PHILIPS [P...
-
英文版
N-channel TrenchMOS?? logic level FET
PHILIPS
-
英文版
N-channel TrenchMOS?? logic level FET
PHILIPS [P...