an
AMP
ZE
comDanv
r
=
Wireless Bipolar Power Transistor,
1.6 - 1.7 GHz
Features
l
l
l
l
l
30W
PHI 617-30
Designed for Linear Amplifier Applications
-30 dBc Typ 3rd IMD at 30 Watts PEP
Common Emitter Class AB Operation
Internal Input Impedance Matching
Diffused Emitter Ballasting
-I
.225?k010
(5.72i.25)
r
OTHERWISE
,400
<lO.l6)-
Absolute Maximum Ratings at 25擄C
Parameter
Symbol
Rating
Units
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
V
CSC
V
CES
V EBD
鈥榗
pcl
?
T STG
8
JC
60
60
3.0
10
109
200
-55 to +150
1.6
V
V
V
A
w
鈥淐
鈥淐
鈥淐M,
UNLESS
NOTED, TOLERANCES
ARE
It+CHES tO鈥橨5鈥?/div>
cHILUHETERS
tJ3nH,
.225&O
(5.72i.25)
Electrical Characteristics
Parameter
at 25擄C
Symbol
Min
Max
Units
Test Conditions
Collector-Emitter
~olle%-Emitter
Collector-Emitter
Collector-Emitter
Breakdown Voltaae
Leakage Current
Breakdown Voltage
Breakdown Voltage
I
BV,,,
LFP
BV,,,
BV,,,
BV,,,
I
60
-
20
30
3.0
15
10
40
)
-
4.0
-
-
-
120
-
-
1
-
3.0:1
-28
V
1 mA
V
V
V
-
dB
%
1 dB
-
dBc
I,=40 mA
1 V,,=25V
I,=40 mA
I,=40 mA, F&=220
I,=40 mA
V,,=5
V,,=25
V, I,=2 A
V, I,,=200
mA, P,,,=30
W PEP, F=l.6,
1.65,1.70
1.651.70
GHz
GHz
1
R
I
Emitter-Base Breakdown Voltaae
DC Forward Current Gain
Power Gain
Collector Efficiencv
I Input Return Loss
Load
Mismatch Tolerance
3rd Order IMD
1
VP,=25 V, I,,=200
1 V-,=25
V,,=25
V,,=25
V, I,,=200
V, I,,=200
V, I,,=020
mA, P,,,,=30 W PEP, F=l.6,
RL
VSWR-T
鈥楳D,
1
10
-
-
mA. P-,.,=30 W PEP, F=1.6, 1.65, 1.70GHz
mA, P,,,=30
mA, P,,,=30
W PEP, F=l.6,
W PEP, F=l650
1.65, 1.70 GHz
MHz, 4F=lOO kHz
Typical Optimum Device Impedances
F(GHz)
z,,w
Z,,m(~)
FZ-
鈥?/div>
04D
1.60
1.65
1.70
2.1 + j4.9
3.1 + j3.8
2.1 +j3.5
1.3-j0.7
1.2 - j0.8
1.2 - j0.9
1
2
3
