*
z-,-3
y--z
.-- =:
---
---
----= z
=-
z =
an AMP company
Wireless Bipolar Power Transistor,
1450 - 1550
MHz
Features
Designed for Linear Amplifier Applications
Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP
Class A: +53 dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Marching
Diffused Emitter Ballasting
鈥榝
60W
PHI516160
.22st.010
C5.72t.25)
f
.^^
/
Absolute Maximum Ratings at 25擄C
Parameter
Symbol
Rating
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
Vcm
VCES
VEm
1,
P,
T,
T srt
8JC
(
65
65
3.0
10
116
200
-55 to +150
1.5
V
V
V
]
A
W
鈥淐
鈥淐
鈥淐IW
UNLESS
OTHERWISE
NOTED, TOLERANCES
ARE
INCHES t.005
<,,,ILUnETERS
r,13M,,,>
Electrical Characteristics
at 25擄C
Typical Optimum Device Impedances
F(MHr)
Z,(Q)
2.2 + j5.0
2.7+j4.5
2.1 + j3.7
1450
1500
1550