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PHI214-6M Datasheet

  • PHI214-6M

  • Radar Pulsed Power Transistor, SW, looms Pulse, 10% Duty 1.2...

  • 1頁

  • MA-COM

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an AMP company
Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty
PHI 214-6M
1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic鈥楴letalKeramic
Package
Absolute Maximum Ratings at 25擄C
UNLESS
C-iTRW:SE
鈥業(yè)CTED.
T3LE?ANCES
A?E
(xI,
--
IN鈥橦ES
=.O鈥濃€榡鈥?/div>
I
IMETERS
; 13yy鈥?/div>
I
Electrical Characteristics
Parameter
at 25擄C
Symbol
Min
Max
Units
Test Conditions
Collector-Emitter Breakdown Voltage
Collector-Emitterleakage
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stablility
Current
BV,,,
ICES
RW(X)
PO鈥漈
GP
鈥榣C
65
-
1.5
5.8
V
mA
鈥淐/w
w
dB
%
lc=l 2 mA
v,,=40 v
V,,=28 V, P&.2
V,,=28 V,
P,,=1.2
W, F=1.20,1.30,1.40
GHz
6.0
7.0
45
-
-
-
W, F=1.20, 1.30, 1.40GHz
GHz
GHz
GHz
GHz
GHz
V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40
Vcc=28
V,
P,,=l.2 W, F=l.20,1.30,1.40
RL
VSWR-T
VSWR-S
6
-
-
-
3:l
1S:l
dB
-
-
V,,=28 V, P&.2
W, F=l.20,1.30,1.40
V,,=28 V, P,,=l.2 W, F=l.20,1.30,1.40
V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40
Broadband
F(GHz)
Test Fixture Impedances
z,,m
z&-4
1.20
1.30
TBD
TBD
TBD
TBD

PHI214-6M相關(guān)型號PDF文件下載

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    Radar Pulsed Power Transistor, SW, looms Pulse, 10% Duty 1.2...
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