an
AMP
company
Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty
PHI 214-30EL
. 1.2 - 1.4 GHz
v2.00
Features
-
_-.-- -
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
Matrix Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic鈥楳etalKeramic
Package
=..*
C23.83)
.820
37kC13
(9 53E.25)
I
Absolute Maximum Ratings at 25擄C
Parameter
Collector-EmitterVoltage
( Emitter-BaseVoltage
Collector Current (Peak)
Total Power Dissipation
JunctionTemperature
Storage Temperature
1
Symbol
V ES
V,,,
鈥榯
P
TOT
TJ
T sic
1
Rating
56
3.0
3.0
50
200
-65 to +200
(
Unita
V
V
A
w
鈥淐
鈥淐
UNLESS
K鈥橧ERWISE
NJTED,
TDLER4N:ES
CARE
INCHES
:H!LLIMETRS
:.DDY
-.!3MM)
.375i.OlO
:9.53=.2s
1
Electrical Characteristics
Parameter
Collector-Emitter
Breakdown Voltage
at 25擄C
Symbol
BV,,,
ICES
R nwC)
P IN
G,
%
Min
56
Max
-
3.0
1.5
4.9
Units
V
mA
鈥淐/W
w
dB
%
dB
-
-
I,=60 mA
V,,=28
V,,=28
V,,=28
V,,=28
.~
I鈥?,=28
V,,=28
V,,=28
v
Test Conditions
Collector-EmitterLeakageCurrent
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stablility
V, PO,=30 W, F=l.20,1.30,1.40
GHz
V, P,,,.=30 W, F=1.20, 1.30. 1.40 GHz
V, P-=30
W, F=1.20, 1.30,1.40
GHz
GHz
GHz
\
W, F=1.20, 1.30, 1.40 GHz
1.30,1.40
GHz
7.8
50
10
-
-
-
-
-
3:1
1.5:1
V. PO,,=30 W, F=l.20,1.30,1.40
V, PO,=30 W, F=l.20,1.30,1.40
V,
PO,,.=30
RL
VSWR-T
VSWR-S
VcC=28 V, P,,,-r=30 W, F-1.20,
Broadband Test Fixture impedances
Specifications
Subject to Change Without Notice.
9-l 32
North
America:
Tel.
Fax
(800)
(800)
366-2266
618-8883
m
Asia/Pacific:
Tel.
Fax
+81 (03)
+81 (03)
3226-1671
3226-1451
=
Europe:
Tel.
Fax
+44
+44
M/A-COM,
(1344)
(1344)
Inc.
869 595
300 020
1
2
