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PHF9NQ20T Datasheet

  • PHF9NQ20T

  • N-channel TrenchMOS transistor

  • 115.60KB

  • 9頁

  • PHILIPS

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Philips Semiconductors
Product specification
N-channel TrenchMOS餂?transistor
PHX9NQ20T , PHF9NQ20T
FEATURES
鈥?/div>
鈥橳rench鈥?/div>
technology
鈥?Low on-state resistance
鈥?Fast switching
鈥?Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 200 V
I
D
= 5.2 A
g
R
DS(ON)
鈮?/div>
400 m鈩?/div>
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using
Trench
technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package
PINNING
PIN
1
2
3
case
gate
drain
source
isolated
DESCRIPTION
SOT186A (FPAK)
case
SOT186 (FPAK)
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 藲C to 175藲C
T
j
= 25 藲C to 175藲C; R
GS
= 20 k鈩?/div>
T
hs
= 25 藲C; V
GS
= 10 V
T
hs
= 100 藲C; V
GS
= 10 V
T
hs
= 25 藲C
T
hs
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
鹵
20
5.2
3.3
21
25
150
UNIT
V
V
V
A
A
A
W
藲C
November 2000
1
Rev 1.100

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