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PHF14NQ20T Datasheet

  • PHF14NQ20T

  • N-channel TrenchMOS transistor

  • 71.15KB

  • 9頁

  • PHILIPS

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Philips Semiconductors
Product specification
N-channel TrenchMOS餂?transistor
PHX14NQ20T , PHF14NQ20T
FEATURES
鈥?/div>
鈥橳rench鈥?/div>
technology
鈥?Low on-state resistance
鈥?Fast switching
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 200 V
I
D
= 7.6 A
g
R
DS(ON)
鈮?/div>
230 m鈩?/div>
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using 鈥檛rench鈥?technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching
applications.
The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
PIN
1
2
3
case
gate
drain
source
isolated
DESCRIPTION
SOT186A (FPAK)
case
SOT186 (FPAK)
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 藲C to 150藲C
T
j
= 25 藲C to 150藲C; R
GS
= 20 k鈩?/div>
T
hs
= 25 藲C; V
GS
= 10 V
T
hs
= 100 藲C; V
GS
= 10 V
T
hs
= 25 藲C
T
hs
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
鹵
20
7.6
4.8
30
30
150
UNIT
V
V
V
A
A
A
W
藲C
November 2000
1
Rev 1.100

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