Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13005
GENERAL DESCRIPTION
The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
V
CEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-Base voltage (I
B
= 0)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
CONDITIONS
V
BE
= 0V
TYP.
-
-
-
-
-
-
-
0.2
0.1
MAX.
700
700
400
9
4
8
75
0.6
0.5
UNIT
V
V
V
V
A
A
W
V
碌s
T
mb
鈮?/div>
25藲C
I
C
= 2A; I
B
= 0.5A
I
C
= 2A; I
B1
= 0.4A; V
BE(OFF)
= 5V
PINNING - TO220AB
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Emitter-Base voltage (I
B
= 0)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
700
400
700
9
4
8
2
4
75
150
150
UNIT
V
V
V
V
A
A
A
A
W
藲C
藲C
T
mb
鈮?/div>
25藲C
THERMAL RESISTANCES8
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
in free air
CONDITIONS
TYP.
-
60
MAX.
1.67
-
UNIT
K/W
K/W
February 1999
1
Rev 1.000
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