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PHB9NQ20T Datasheet

  • PHB9NQ20T

  • N-channel TrenchMOS transistor

  • 113.28KB

  • 12頁

  • PHILIPS

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Philips Semiconductors
Product specification
N-channel TrenchMOS鈩?transistor
PHP9NQ20T, PHB9NQ20T
PHD9NQ20T
QUICK REFERENCE DATA
d
FEATURES
鈥?/div>
鈥橳rench鈥?/div>
technology
鈥?Low on-state resistance
鈥?Fast switching
鈥?Low thermal resistance
SYMBOL
V
DSS
= 200 V
I
D
= 8.7 A
g
R
DS(ON)
鈮?/div>
400 m鈩?/div>
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using
Trench
technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHP9NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package
The PHB9NQ20T is supplied in the SOT404 (D
2
PAK) surface mounting package
The PHD9NQ20T is supplied in the SOT428 (DPAK) surface mounting package
PINNING
PIN
1
2
3
tab
DESCRIPTION
gate
drain
1
source
SOT78 (TO220AB)
tab
SOT404 (D
2
PAK)
tab
SOT428 (DPAK)
tab
2
1 23
2
1
3
1
3
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 藲C to 175藲C
T
j
= 25 藲C to 175藲C; R
GS
= 20 k鈩?/div>
T
mb
= 25 藲C; V
GS
= 10 V
T
mb
= 100 藲C; V
GS
= 10 V
T
mb
= 25 藲C
T
mb
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
鹵
20
8.7
6.2
35
88
175
UNIT
V
V
V
A
A
A
W
藲C
1
It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
August 1999
1
Rev 1.100

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