鈩?/div>
s
t
rr
= 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a
Fast Recovery Epitaxial Diode
(FRED).
This gives improved switching performance in half bridge and full bridge converters making this device particularly
suitable for inverters, lighting ballasts and motor control circuits.
The PHP6ND50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6ND50E is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
gate
drain
1
source
DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 藲C to 150藲C
T
j
= 25 藲C to 150藲C; R
GS
= 20 k鈩?/div>
T
mb
= 25 藲C; V
GS
= 10 V
T
mb
= 100 藲C; V
GS
= 10 V
T
mb
= 25 藲C
T
mb
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
鹵
30
5.9
3.7
24
125
150
UNIT
V
V
V
A
A
A
W
藲C
August 1998
1
Rev 1.100
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