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PHB4N40E Datasheet

  • PHB4N40E

  • PowerMOS transistors Avalanche energy rated

  • 81.84KB

  • 9頁

  • PHILIPS

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Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
FEATURES
鈥?Repetitive Avalanche Rated
鈥?Fast switching
鈥?Stable off-state characteristics
鈥?High thermal cycling performance
鈥?Low thermal resistance
PHP4N40E, PHB4N40E
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 400 V
g
I
D
= 4.4 A
R
DS(ON)
鈮?/div>
1.8
鈩?/div>
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHP4N40E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB4N40E is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
gate
drain
1
source
DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 藲C to 150藲C
T
j
= 25 藲C to 150藲C; R
GS
= 20 k鈩?/div>
T
mb
= 25 藲C; V
GS
= 10 V
T
mb
= 100 藲C; V
GS
= 10 V
T
mb
= 25 藲C
T
mb
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
400
400
30
4.4
2.7
18
83
150
UNIT
V
V
V
A
A
A
W
藲C
December 1998
1
Rev 1.200

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