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PHB12NQ15T Datasheet

  • PHB12NQ15T

  • N-channel TrenchMOS transistor

  • 12頁

  • PHILIPS

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Philips Semiconductors
Product specification
N-channel TrenchMOS鈩?transistor
PHP12NQ15T, PHB12NQ15T
PHD12NQ15T
QUICK REFERENCE DATA
d
FEATURES
鈥?/div>
鈥橳rench鈥?/div>
technology
鈥?Low on-state resistance
鈥?Fast switching
鈥?Low thermal resistance
SYMBOL
V
DSS
= 150 V
I
D
= 12.5 A
g
R
DS(ON)
鈮?/div>
200 m鈩?/div>
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using 鈥檛rench鈥?technology. The device
has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB12NQ15T is supplied in the SOT404 (D
2
PAK) surface mounting package.
The PHD12NQ15T is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
gate
drain
1
source
SOT78 (TO220AB)
tab
SOT404 (D
2
PAK)
tab
SOT428 (DPAK)
tab
2
1 23
2
1
3
1
3
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 藲C to 175藲C
T
j
= 25 藲C to 175藲C; R
GS
= 20 k鈩?/div>
T
mb
= 25 藲C; V
GS
= 10 V
T
mb
= 100 藲C; V
GS
= 10 V
T
mb
= 25 藲C
T
mb
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
150
150
鹵
20
12.5
8.8
50
88
175
UNIT
V
V
V
A
A
A
W
藲C
1
It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
August 1999
1
Rev 1.000

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