PH8230E
TrenchMOS鈩?enhanced logic level FET
M3D748
Rev. 02 鈥?29 April 2003
Product data
1. Product pro鏗乴e
1.1 Description
N-channel enhancement mode 鏗乪ld-effect power transistor in a plastic package using
TrenchMOS鈩?technology.
Product availability:
PH8230E in SOT669 (LFPAK).
1.2 Features
s
Low thermal resistance
s
Low gate drive current
s
SO8 equivalent area footprint
s
Low on-state resistance.
1.3 Applications
s
DC-to-DC converters
s
Portable appliances
s
Switched-mode power supplies
s
Notebook computers.
1.4 Quick reference data
s
V
DS
鈮?/div>
30 V
s
P
tot
鈮?/div>
62.5 W
s
I
D
鈮?/div>
67 A
s
R
DSon
鈮?/div>
8.2 m鈩?/div>
2. Pinning information
Table 1:
Pin
1,2,3
4
mb
Pinning - SOT669 (LFPAK), simpli鏗乪d outline and symbol
Description
source (s)
mb
d
Simpli鏗乪d outline
Symbol
gate (g)
mounting base;
connected to drain (d)
g
s
MBB076
1
2
3
4
MBL286
Top view
SOT669 (LFPAK)
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