PH7030L
N-channel TrenchMOS鈩?logic level FET
Rev. 04. 鈥?7 March 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS鈩?technology.
1.2 Features
s
Low thermal resistance
s
Logic level gate drive
s
S08 equivalent area footprint
s
Low on-state resistance.
1.3 Applications
s
DC-to-DC converters
s
Portable appliances
s
Switched-mode power supplies
s
Notebook computers.
1.4 Quick reference data
s
V
DS
鈮?/div>
30 V
s
R
DSon
鈮?/div>
7.9 m鈩?/div>
s
I
D
鈮?/div>
68 A
s
P
tot
鈮?/div>
62.5 W.
2. Pinning information
Table 1:
Pin
1, 2, 3
4
mb
Pinning
Description
source
gate
mounting base; connected to drain
mb
D
Simpli鏗乪d outline
Symbol
G
mbb076
S
1 2 3 4
SOT669 (LFPAK)
next
PH7030L 產(chǎn)品屬性
34 ns
24 ns
12 nC V @ 5
1362 pF V @ 10
表面貼裝
4.1mm
LFPAK
5 x 4.1 x 1.1mm
5
-55 °C
62500 mW
±20 V
30 V
0.008
68 A
+150 °C
1
功率 MOSFET
增強(qiáng)
N
單、三源
5mm
1.1mm
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