PH4840S
N-channel TrenchMOS鈩?intermediate level FET
M3D748
Rev. 01 鈥?04 March 2004
Preliminary data
1. Product pro鏗乴e
1.1 Description
N-channel enhancement mode 鏗乪ld-effect power transistor in a plastic package using
TrenchMOS鈩?technology.
1.2 Features
s
Low thermal resistance
s
Low threshold voltage
s
SO8 equivalent area footprint
s
Low on-state resistance.
1.3 Applications
s
DC-to-DC converters
s
Portable appliances
s
Switched-mode power supplies
s
Notebook computers.
1.4 Quick reference data
s
V
DS
鈮?/div>
40 V
s
P
tot
鈮?/div>
62.5 W
s
I
D
鈮?/div>
94.5 A
s
R
DSon
鈮?/div>
4.1 m鈩?/div>
2. Pinning information
Table 1:
Pin
1,2,3
4
mb
Pinning - SOT669 (LFPAK), simpli鏗乪d outline and symbol
Description
source (s)
mb
d
Simpli鏗乪d outline
Symbol
gate (g)
mounting base;
connected to drain (d)
1
2
3
4
MBL286
g
s
MBB076
Top view
SOT669 (LFPAK)
next
PH4840S 產(chǎn)品屬性
82 ns
21 ns
67 nC V @ 10
3660 pF V @ 10
表面貼裝
4.1mm
LFPAK
5 x 4.1 x 1.1mm
5
-55 °C
62500 mW
±20 V
40 V
0.004
94.5 A
+150 °C
1
功率 MOSFET
增強
N
單、三源
5mm
1.1mm