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anAMPcompany
Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty
PH3134-65M
3.1 - 3.4 GHz
Features
l
l
l
l
l
l
l
l
.650
(16.51)-
NPN Silicon
Microwave
Power
Transistor
.225*.010
(5.72Z.25)
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
HermeticMetaVCeramic
Package
Absolute Maximum Ratings at 25擄C
.225t010
(5.72i.25)
EMIlYER
167i.010
uNLE.ss
OTHERWISE NOTED, TOLERANCES ARE (nILLIMETERS * 13nH,
INCHES
k.005鈥?/div>
Electrical Characteristics
at 25擄C
Broadband Test Fixture impedances
F(GHz)
Z,(Q)
z&4
I
3.10
3.25
11.2-j11.7
11.5-j9.5
I
12.7-j7.6
1
8.1 - j5.3
7.1 - j4.3
6.4-j3.3
(
I
3.40
Specifications Sublect to Change Without Notlce.
1
2
