an AMP
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company
Radar Pulsed Power Transistor, 3OW, IOOps Pulse, 10% Duty
PH3135-30M
3.1 - 3.5 GHz
v2.00
Features
l
l
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SJC
_
:22
65,
-:16.51)
433
<13.:5:-,
_
85:
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Effkiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25擄C
Parameter
) Symbol
Rating
Units
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
JunctionTemperature
StorageTemperature
V
CES
VES0
I^
PTOT
TJ
T
ST0
-65
65
3.0
3.6
250
200
to +200
V
V
A
w
鈥淐
鈥淐
,167~ i-110
7:4.24鈥?25>
,103
C2.54)
-
F--
034鈥?31
Electrical Characteristics
Parameter
at 25擄C
Symbol
Min
Max
Units
Test Conditions
I,=20
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gajn
Collector Efficiency
Input Return Loss
Load MismatchTolerance
Load Mismatch Stability
BV,,,
鈥楥ES
65
-
3.0
0.7
V
mA
鈥淐/W
w
mA
v,,=40 v
Vcc=36
Vcc=36
RTH(JC,
POUT
GP
%
V, P,,=6.0 W, F=3.1,3.3,3.5 GHz
V. P;,=6.0 W, F=3.1,3.3,3.5 GHz
30
7.0
35
6
-
-
-
dB
o/b
V,,=36 V, P,,=6.0 W, F=3.1,3.3, 3.5 GHz
Vcc=36
V, P,,=6.0 W, F=3.1,3.3,3.5 GHz
RL
VSWR-T
VSWR-S
-
3:l
dB
-
V,,=36 V, P,,=6.0 W. F=3.1,3.3,3.5 GHz
Vcc=36
-
-
V, P,,=6.0 W, F=3.1,3.3,3.5 GHz
2:l
-
V,,=36V, P,,=6.0 W, F=3.1,3.3,3.5GHz
Broadband Test Fixture Impedances
F(GHz)
3.10
3.30
z,,(n)
21 + j2.0
19-j2.4
z,F(n)
13.8-j11.7
7.7 - j8.2
5.3 - j5.3
3.50
16 -jS.l
Specifications
Subject to Change Without Notice.
1
2
