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• 1
• 2

an

AMP

company

Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty

3.1 - 3.4 GHz

PH3134-55L

Features

NPN Silicon Microwave Power Transistor

Common Base Configuration

Broadband Class C Operation

High Effkiency Interdigitated Geometty

Diffused Emitter Ballasting Resistors

Gold Metalization System

Internal Input and Output Impedance Matching

Hermetic Metal/Ceramic Package

.225+010

(5.?2%2!5>

t

mLEcTIR

+j,j

--A

+-

f

PAS

I

.130

(3.30)

fl

2%

Absolute Maximum Ratings at 25擄C

Parameter

Collector-Emitter

Voltage

Symbol

VES

Rating

65

Units

V

---

6.72t.25)

Emitter-Base Voltage

UNLESS OTHERWISE

NOTED, TOLERANCES

ARE

(MIEMH$ER:.鈥?amp;,,

Electrical Characteristics

Parameter

Collector-Emitter

1 Collector-Emitter

Breakdown

Voltage

Leakage Current

at 25擄C

Symbol

Min

Max

Units

Test Conditions

I,=25 mA

1 V,,=36V

V,,=36

V-,=36

V, POUT- W, F=3.10,3.25,3.40

-55

V, P,,,,=55 W, F=3.10, 3.25,3.40

W, F=3.10,3.25,3.40

GHz

GHz

GHz

GHz

I

BV,,,

1

lcFB

1

65

-

1

-

5.0

0.5

9.0

V

1 mA

鈥淐IW

w

I

Thermal Resistance

InDut Power

I

Power Gain

Collector Efficiency

Input Return Loss

Load Mismatch Tolerance

I

GP

鈥業(yè)c

RL

VSWR-T

I 7.5

35

6

-

I

-

-

1 dB

%

1 V,,=36 V, P,fi55

V,,=36

V, PO,=55 W, F=3.10,3.25,3.40

-

2:l

dB

-

I鈥?,=36 V, PO,,,=55W, F=3.10,3.25,3.40

V,,=36

V, PO,?55

W, F=3.25 GHz

GHz

Specifications

Subject

to Change

Without

Notice.

next

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