Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty
PH3134-2OL
3.1 - 3.4 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic-Metal/Ceramic
Package
Absolute Maximum Ratings at 25擄C
:2.54)
Parameter
Collector-Emitter
Voltage
( Symbol
V
ES
v
EBO
1
Rating
65
3.0
2.4
146
200
-65
1
Units
V
.I672
010
304s 301
ID0
(2.54)
-
I-
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
Junction Temperature
StorageTemperature
V
A
w
鈥淐
鈥淐
LIN:;SS
3T鈥滶RV!SE
NC;D,
TOLERbNCS
A?E
鈥榗
P
TOT
TJ
T
Sit
..^^
!
-
--J-f
-.I.
i
.06o='.oozJ
~1.52Z.05)
INCKS
(M!cLIMETERS
k.005鈥?/div>
z.13MM)
1
to
+200
Electrical Characteristics
Parameter
Collector-Emitter
Collector-Emitter
Breakdown Voltage
Leakage Current
at 25擄C
1 Symbol
BV,,,
鈥楥ES
( Min
65
( Max
-
1.5
1.2
1 Units (
V
mA
鈥淐M鈥?/div>
W
dB
I,=10 mA
vc,=40
V,,=36
V,,=36
v
V, P,,f20
TestConditions
Thermal Resistance
Input Power
Power Gain
Collector
Efficiency
Input Return Loss
Load MismatchTolerance
R THUCI
PIN
GP
鈥榣C
W, Fz3.1, 3.25,3.4
GHz
GHz
-
7.5
3.56
-
V, P 0UT=2OW, F=3.1, 3.25,3.4
Vct=36 V, PO,,=20 W, Fz3.1, 3.25, 3.4 GHz
35
6
-
-
-
2:l
%
dB
-
V,,=36 V,
PO,,=20 W, Fz3.1, 3.25, 3.4 GHz
鈥業(yè),,=36
V,,=36
V, P,,e20
W, F=3.1,3.25,3.4
GHz
RL
VSWR-T
V, Pour=20 W, F=3.25 GHz
Specifications
Subject
to Change
Without
Notice.
1
2
