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Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty
PH3134-11s
3.1 - 3.4 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25擄C
I
.I00 I / I
;2.54>--- -
,250
-.152-.x0
(3.86-25)
75.35>-7
,130
-7(3.30:~
I
I
.034'.031
StorageTemperature
T
STG
-65 to +200
鈥溾€?
UNLESS
IT-ERWISE
NCTEC,
TZLESANCES
ARE
INCES
:MJLLIMETERS
=.305鈥?/div>
=.!3MW>
Electrical Characteristics
Parameter
Collector-Emitter
Collector-Emitter
Breakdown Voltage
Leakage Current
at 25擄C
Symbol
BV,,,
鈥楨s
R TWC,
P IN
GP
%
Min
I
60
Max
1
-
1.25
1.4
1.74
Units
I
V
mA
鈥淐M鈥?/div>
w
I,=1 2.5
mA
lest Conditions
I
V,,=36
I鈥?,=36
V,c=36
V
V, P,,,=ll
V, P,,,.=ll
W, F=3.1,3.25,3.4
W, F=3.1,3.25,3.4
GHz
GHz
GHz
GHz
GHz
Thermal Resistance
input Power
Power Gain
Collector Efficiency
input Return Loss
Load Mismatch Tolerance
8.0
-
-
-
2:l
dB
%
dB
-
V,,=38
I鈥?,=36
I鈥?,=36
V, Pour=1 1 W, F=3.1, 3.25,3.4
V. P,,=ll
V, P,,,=ll
W. F=3.1,3.25,3.4
W, F=3.1,3.25,3.4
1 W, F=3.25 GHz
35
6
RL
VSWR-T
-
Vcc=36 V, P,el
Broadband Test Fixture Impedances
F(GHz)
3.10
3.25
I
z,,m
17.5 - j8.5
15.0-
j8.2
I
z,Fcm
90.0 + j37.0
58.0 + j7.0
-
A
3.40
13.0 - j8.0
36.0
+ j14.5
-
Specifications Subject to Change Without Notice.
1
2
