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Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty
PH2931 -I 3%
2.9 - 3.1 GHz
Features
NPN Silicon Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency InterdigitatedGeometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance
Hermetic鈥?FleWCeramic
Package
Matching
Absolute Maximum Ratinas at 25擄C
I Parameter
Collector-EmitterVoltage
Emitter-Base
Voltage
1 Symbol
V
CES
V
ES0
鈥榗
P TOT
T,
T
STG
1
Rating
80
3.0
12
580
200
-65 to +200
1 Units
V
V
I
I
C+!:TiER
I
.003~.031
Collector Current (Peak)
Total Power Dissipation
JunctionTemperature
StorageTemperature
A
W
鈥淐
鈥淐
UNLESS
OTELRWISE
NDTE%
TOLERANCES
ARE
(1.52鈥?05)
INCHES
(M,LLIMET~~S
.060i.DOE
f
t.005鈥?/div>
= 13MM)
Electrical Characteristics
at 25擄C
Specifications Subject to Change Without Notice.
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