an AMP cotn~any
Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty
2.856 GHz
Features
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PH2856-160
NPN Silicon Microwave Power Transistor
Common Base Configuration
Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic-Metal/Ceramic Package
Absolute Maximum Ratings at 25擄C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
] Collector Current (Peak)
Total Power Dissipation
JunctionTemperature
StorageTemperature
)
Symbol
VCES
VEBO
lr
P
TOT
T,
TSTG
1
Rating
65
3.0
15.0
700
200
-65 to +200
I
Units
V
V
*
W
鈥淐
鈥淐
I
<?.?9'.25)
Electrical Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
at 25擄C
Symbol
BVCES
鈥楨s
RTHIJC)
PIN
GP
%
RL
VSWR-T
7.5
40
6
-
Min
65
Max
-
7.5
0.25
28.5
-
-
-
3:l
Units
V
mA
鈥淐/W
w
dB
%
dB
-
I,=40 mA
V,,=36 V
V,,=40 V, PO,=1 60 W, F=2.856 GHz
V,,=40 V, PO,,=160 W, F=2.856 GHz
V,,=40 V, PO,=160 W, F=2.856 GHz
V,,=40 V, PO,,=160 W, F=2.856 GHz
V,,=40 V, PO&
60 W, F=2.856 GHz
Test Conditions
V,,=40 V, PO,,=160 W, F=2.856 GHz
Test Fixture Impedance
F(GHz)
2.856
Z,(Q)
4.4 - j4.9
q,,(n)
4.6-j1.6
TEST
GXTURE
:N=Vi
L
YESi
FIXTURE
0ur=v7
-i
CIRCU!T
CIRCUIT
-
--ZOF
5OR
-c
L
-
50R
-
-
21:
3-r
Specifications Subject to Change Without Notice.
1
2
