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Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty
PH2729-8SM
2.7 - 2.9 GHz
v2.00
Features
NPM Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic MtxaKeramic
Package
903
(22.86:
Absolute Maximum Ratings at 25擄C
Electrical Characteristics
Parameter
at 25擄C
Symbol
Min
Max
Units
lest Conditions
Collector-Emitter Breakdown Voltage
Collector-EmitterLeakage Current
Thermal Resistance
Output Power
Power Gain
BVcEs
鈥楨S
RTHIJC~
POUT
GP
65
-
1.5
2.2
V
mA
鈥淐/W鈥?/div>
W
dB
%
dB
-
-
I,=1 0 mA
v,,=40 v
V,,=36 V, P,,=1.3 W, F~2.7, 2.8, 2.9 GHz
V,,=36 V, P&.3
W, F=2.7,2.8,2.9 GHz
1
I V,,=36 V, P&.3
W, F=2.7, 2.8.2.9 GHz
( V,,=36 V, P,,=1.3 W, F=2.7,2.8,2.9 GHz
j V,,=36 V, P,,=l.3 W, F=2.7,2.8,2.9 GHz
/ V-,=36 V, P..,=1.3 W, F=2.7. 2.8,2.9 GHz
8.5
8.1
-
-
1 V,,=36 V, P,,=1.3 W, F-2.7, 2.8,2.9 GHz
I-
Collector Efficiency
I
T(c Id
RL
VSWR-T
VSWR-S
6
-
-
-I
-
3:l
1.51
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stablilitv
Broadband Test Fixture Impedances
F(GHz)
z,,(Q)
z,,(n)
25 + j3.5
20 + j2.0
16ej2.4
.
2.70
2.80
2.90
40-j12
38-j14
35-j16
-
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Specifications Subject to Change Without Notice.
1
2
