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Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty
PH2729-65M
2.7 - 2.9 GHz
I
.300
v2.00
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Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
(22.86)
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Absolute Maximum Ratings at 25擄C
Parameter
1 Collector-Emitter
rr--
1 Symbol
Voltage
1
V,,,
V
ES0
L
/
P,,,
TJ
T
STG
1
1
Rating
65
3.0
8.0
1 Units
1
I v I
V
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
A
I
330
200
-65 to +200
I w I
鈥淐
UNLESS
CT;ERVISE
NOTED,
TDLERANCES
A4E
INCHIS
:WILLIME?;RS
5.005鈥?/div>
:.13MH)
JunctionTemperature
Storage Temperature
鈥淐
Electrical Characteristics
Parameter
Collector-Emitter
i Collector-Emitter
Breakdown Voltaoe
Leakage Current
at 25擄C
Symbol
BV,,,
I
lCES
R TWC;
PIN
G.
-
a.5
1
Min
65
-
)
Max
-
Units
V
I,=50 mA
1 V,,=36V
1 Vo=36
V,,=36
V-,=36
1 V,,=36
V,,=36
V,,=36
V, PO,=65
V. PO,=65
V, PA,,=65
V, PO,=65
V, Poe65
V, Poe65
W, F=2.7.2.6,2.9
W, F=2.7,2.6,2.9
W. F=2.7,2.6,2.9
W, F=2.7,2.6,2.9
W. F=2.7,2.8,2.9
W. F=2.7,2.8,2.9
W, F=2.7,2.6,2.9
GHz
GHz
GHr
GHz
GHz
GHz
GHz
Test Conditions
7.5
1 mA
0.45
9.0
-
1
鈥渃J鈥?t鈥?/div>
w
dB
%
dB
-
-
I
Thermal Resistance
Input Power
Power Gain
I-
Collector
Efficiency
I
rlc
RL
VSWR-T
VSWR-S
I 40 I -
9
-
-
-
2:l
l.S:l
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stablilitv
VP,=36 V, P,,,=65
Broadband Test Fixture Impedances
F(GHz)
2.70
2.80
2.90
Z,(Q)
7.8 - j8.3
7.3 - j6.7
7.2 - j5.0
z,,(*)
9.3 - j8.9
9.0 - j8.4
8.6 -j&O
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-
-
L
-
I
Specifications Subject to Change Without Notice.
1
2
