T=-
鈥?
an
AMP
cornRaw
Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty
PH2729-11 OM
2.7 - 2.9 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
.
Absolute Maximum Ratings at 25擄C
Parameter
Collector-Emitter Voltage
Symbol
V
CES
Rating
65
Units
V
StorageTemperature
T
STC
-65 to +200
鈥淐
i
.063r.00?
:1.52+.0:>
Electrical Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Overdrive Stability
Load Mismatch Tolerance
Load Mismatch Stablility
at 25擄C
Symbol
BV,,,
ICES
R-w(X)
P
OUT
GP
%
Min
65
Max
-
7.5
0.3
Units
V
mA
鈥淐M.
W
dB
%
dB
dB
-
-
I,=40 mA
V,,=36 V
lest Conditions
V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz
V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz
V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz
V,,=36 V. P,,=23 W, F=2.7,2.8,2.9 GHz
V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz
鈥業(yè),,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz
V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz
I鈥?,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz
110
6.8
35
6
-
-
-
-
-
-
-
1.0
2:l
1.5:1
RL
OD-S
VSWR-T
VSWR-S
Broadband Test Fixture impedances
TfST
-
::XTUR:
ZIRCWT
- I
-
-
TESi
;IXTlJRE
OUTPUT
CIRttliT
1
I
2.70
2.80
2.90
I
I
I
4.3 - j7.0
4.4 - j6.4
4.6 - j5.8
I
I
I
2.6 - j3.9
2.6 - j3.5
2.9 - j3.1
I
3
-
I
I
A-
-
-
Specifications
Subjectto ChangeWithoutNotice.
1
2
