PH2625L
N-channel TrenchMOS鈩?logic level FET
Rev. 02 鈥?24 February 2005
Preliminary data sheet
1. Product pro鏗乴e
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS鈩?technology.
1.2 Features
s
Optimized for use in DC-to-DC
converters
s
Low threshold voltage
s
Very low switching and conduction
losses
s
Low thermal resistance.
1.3 Applications
s
DC-to-DC converters
s
Voltage regulators
s
Switched-mode power supplies
s
Notebook computers.
1.4 Quick reference data
s
V
DS
鈮?/div>
25 V
s
Q
gd
= 7.3 nC (typ)
s
R
DSon
鈮?/div>
2.8 m鈩?(V
GS
= 10 V)
s
I
D
鈮?/div>
100 A
s
Q
g(tot)
= 32 nC (typ)
s
R
DSon
鈮?/div>
4.1 m鈩?(V
GS
= 4.5 V).
2. Pinning information
Table 1:
Pin
1, 2, 3
4
mb
Pinning
Description
source
gate
mounting base; connected to drain
mb
G
mbb076
Simpli鏗乪d outline
Symbol
D
S
1 2 3 4
SOT669 (LFPAK)
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