an
AMP
cormany
CW Power Transistor,
2.3 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Class C Operation
Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Hermetic MetalCeramic Package
3.5W
PH2323-3
v2.00
Absolute Maximum Ratings at 25擄C
Parameter
Symbol
Rating
Units
Electrical Characteristics
Parameter
Collector-Emitter
Collector-Emitter
Input Power
Power Gain
CollectorEfficiency
Input Return Loss
Load Mismatch Tolerance
Breakdown
Voltage
Leakage Current
at 25擄C
1 Symbol
1 Min
1 Max
1 Units
1
Test Conditions
BV,,,
I
CES
PIN
GP
鈥業(yè)c
RL
60
1
-
1.0
1
V
mA
w
I,=5 mA
V,,=28 v
V,,=28
-
8
30
0.48
-
-
V, PoUT=3.0W, F=2.3 GHz
-I
V, P,,?3.0
V, P,LI.F3.0
dB
%
1 V,,=28
1 V,,=28
W, F=2.3 GHz
W, F=2.3 GHz
W, F=2.3 GHz
W, F=2.3 GHz
1
6
-
-
3:l
dB
-
V,,=28
V,,=28
V, P,,=3.0
V, P,,,.=3.0
VSWR-T
Test Fixture Impedances
F(GHz)
2.30
7:s;
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INPLI-
C:RCiJ:T
TES鈥?/div>
FIXTURE
JLl%JT
CIRLIIT
-
Z,(Q)
6.5 - j23.0
z&4
6.3 + j5.4
50R
-
-
son i
-
-
1
2
