PDF預(yù)覽

• 1
• 2

3

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an

AMP

comDanv

CW Power Transistor,

2.3 GHz

Features

l

l

l

l

l

l

l

1W

PH2323-1

v2.00

NPN Silicon Microwave Power Transistor

Common Base Configuration

Class C Operation

Interdigitated Geometry

Diffused Emitter Ballasting Resistors

Gold Metalization System

Hermetic Metal/Ceramic Package

.lOCZ31C

:2.s4.25,

!t

,

I

Absolute Maximum Ratings at 25擄C

,233

el.84)

1

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:2.5L=.25)

1

UN-53

3TRiRWiSE

NOTED, TDLERANCES

ARE :HILLI,,ETERS

t,,3,,M>

Electrical Characteristics

at 25擄C

Test Fixture Impedances

F(GHz)

2.30

zsw

12.5 - i26.0

z,,w

3.7+j10.4

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