Radar Pulsed Power Transistor, 50 Watts,
2.25-2.55 GHz, 100
碌S
Pulse, 10% Duty
8/21/02
Rev. 3
PH2226-50M
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
Absolute Maximum Ratings at 25 擄C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +45 擄C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
T
STG
T
j
Rating
63
3.0
6
159
-65 to +200
200
Units
V
V
A
W
擄C
擄C
Electrical Characteristics at 25 擄C
Parameter
Collector-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Symbol
BV
CES
I
CES
R
TH(JC)
P
O
G
P
Min.
63
-
-
50
8.0
40
9
-
-
Max.
-
3.0
1.1
-
-
-
-
3:1
1.5:1
Units
V
mA
擄C/W
W
dB
%
dB
-
-
I
C
=15 mA
V
CE
=36 V
V
CC
=36 V, P
IN
= 8 W, Freq= 2.25 and 2.55 GHz
V
CC
=36 V, P
IN
= 8 W, Freq= 2.25 and 2.55 GHz
V
CC
=36 V, P
IN
= 8 W, Freq= 2.25 and 2.55 GHz
V
CC
=36 V, P
IN
= 8 W, Freq= 2.25 and 2.55 GHz
V
CC
=36 V, P
IN
= 8 W, Freq= 2.25 and 2.55 GHz
V
CC
=36 V, P
IN
= 8 W, Freq= 2.25 and 2.55 GHz
V
CC
=36 V, P
IN
= 8 W, Freq= 2.25 and 2.55 GHz
Test Conditions
畏
RL
VSWR-T
VSWR-S
1
2
