PH1955L
N-channel TrenchMOS logic level FET
Rev. 01 鈥?15 August 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
s
Logic level threshold
s
175
擄C
rated
s
Low on-state resistance
s
Surface-mounted package
1.3 Applications
s
DC-to-DC converters
s
Motors, lamps and solenoids
s
General purpose power switching
s
12 V and 24 V loads
1.4 Quick reference data
s
V
DS
鈮?/div>
55 V
s
R
DSon
鈮?/div>
17.3 m鈩?/div>
s
I
D
鈮?/div>
40 A
s
Q
GD
= 8 nC (typ)
2. Pinning information
Table 1:
Pin
1, 2, 3
4
mb
Pinning
Description
source (S)
gate (G)
mounting base;
connected to drain (D)
1 2 3 4
mb
D
Simpli鏗乪d outline
Symbol
G
mbb076
S
SOT669 (LFPAK)
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