an
AMP
company
Wireless Bipolar Power Transistor, 33W
1930 - 1990 MHz
Features
NPN Silicon Microwave Power Transistor
Common Emitter Class AB Operation
Internal Input and Output Impedance Matching
Diffused Emitter Ballasting
Gold Metallization System
PHI 920-33
v2.01
Absolute鈥檉iaximum
Parameter
Collector-EmitterVoltage
Collector-Emitter
Emitter-Base
Voltage
Ratings at 25擄C
1 Symbol
V
CEO
V
ES
V
ES0
L
PO
T s-r0
TJ
eJC
1
Rating
25
65
3.0
4.7
91
-55 to +150
200
1.6
Units
V
V
,181 (4.60)+.010 (0.25)
225 (5.72)a.015 (0.38)
BASE
220 I--
(5.59)
,
II
Voltage
V
A
w
鈥淐
鈥淐
鈥淐IW
.4~~r?:-ll(o.03~
CollectorCurrent
Power Dissipation
StorageTemperature
JunctionTemperature
Thermal Resistance
I
.087 (2.21)*.010 (0.25)
I
I
1
II
t
UNLESS OTHERWISE NOTED, TOLERANCES ARE
INCHES r.OOS (MILLIMETERS dI.13MM)
Electrical Characteristics
Parameter
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
at 25擄C
Symbol
GP
7\c
RL
VSWR-T
Min
7.0
40
10
-
Max
-
-
-
2:l
Units
dB
%
dB
-
V&f5
V,,=25
V,,=25
V,,=25
V, I,,=200
V, I,,=200
V, l,g200
V. I,,=200
TestConditions
mA, PO,,=33 W, F=l930,1990
mA, PO,,=33 W, F=1930,1990
mA, PO,=33 W, F=l930,1990
mA, PO,=33
W, F=lQ30,1990
MHz
MHz
MHz
MHz
Broadband Test Fixture Impedances
F(GHz)
.1930
1960
1990
z&-4
2.6 - j2.6
2.5 - j2.5
2.4 - j2.3
z,,(n)
3.3 - jl .l
3.8 - jl .O
4.1 - jO.8
1
2
