鈥?/div>
1
I
--A-;
,110
:2.79>
t
19.5
200
-55 to +150
7.5
,
INCt-3 t COY
=,13MM)
Electrical Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Power Gain
Collector Efficiency
Input Return Loss
Load MismatchTolerance
3rd Order IMD
at 25擄C
Symbol
BV,,,
I
CES
BVcEo
BV,,,
hFE
GP
%
Min
60
Max
-
2.0
Units
V
mA
V
V
-
I,=5
mA
Test Conditions
V,,=24 V
I,=5
mA
20
3.0
15
-
-
120
1,=2.5 mA
V,,=5 V, I,=O.l A
V,:=26 V, I,,-,=20mA, PO,,.=4W PEP, F=1850 MHz, AF=lOO kHz
V&6
V, l,c=20 mA, Po,,r=4 W PEP, F=1850 MHz,
AF=lOO
kHz
W PEP, Ft1850 MHz, AF=lOO kHz
10
25
-
-
dB
%
RL
VSWR-T
IMD,
10
-
-
-
1O:l
-30
dB
-
dBc
V,,t26 V, I,,=20 mA, Poe4
V,,=26 V, l,c=20 mA, POUT=4 PEP, F=1850 MHz, AF=l 00 kHz
W
V,,=26 V, I,,=20 mA, PO,=4 W PEP, F=1850 MHz,
AF=~ 00
kHz
Typical Optimum Device Impedances
I
I
F(MHz)
1780
1850
1900
I
q(Q)
3.5+i9.3
3.1 + j9.2
3.3 + jS.9
LAO(Q)
I
3.5+j5.6
4.5 + j5.2
4.8 + j5.5
(
1
2
3
