=-r_=
an
AMP
company
Wireless Bipolar Power Transistor,
1.78 - 1.90 GHz
Features
Designed for Cellular Base Station Applications
Class AB:
-34
dBc Typ 3rd IMD at 2 Watts PEP
Class A:
+43
dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting
2W
PH1819-2
Absolute Maximum Ratings at 25擄C
Parameter
Symbol
Rating
Units
( Collector-BaseVoltage
)Collector-EmmerVoltage
Emitter-BaseVoltage
CollectorCurrent
1
)
I
V,,,
V,,,
_-_
V
EBO
L
1
1
65
65
3.0
2.0
( v-1
I
VI
V
A
1
W
鈥淐
鈥淐
鈥淐/W
I-
Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
1
1
P,
TJ
T
STG
8JC
(
13.5
200
-55 to +150
13
1
Electrical Characteristics
Parameter
at 25擄C
Symbol
Min
Max
-
1.0
Units
Test Conditions
Collector-Emitter Breakdown Voltage
Collector-EmitterLeakage Current
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Power Gain
Collector Efficiency
lnout Return Loss
Load Mismatch Tolerance
3rd Order IMD
BV,,.
鈥楥ES
65
V
mA
V
V
V
-
dB
%
dB
7
1~5 mA
V,,=25 V
I,=5 mA
I,=5 mA, R,,=220 R
I,=5 mA
V,,=5 V, I,=200 mA
V,,=25 V, I,,=25 mA, Pout=2.0 W, F=1.78,1.85,1.90 GHz
V&5
V, I,,=25 mA, Po,f2.0
W, F=l.78, 1.85, 1.9OGHz
GHz
BV,Eo
BV,.,
BV,,,
hFE
GP
鈥業(yè)C
22
30
3.0
15
10
35
10
-
-
-
-
-
120
-
-
-
5:l
-32
RL
VSWR-T
IMD,
V-,=25 V. I,,=25 mA, P*,,*=2.0 W, F=l.78,1.85,1.90
V,,=25 V, I,,=25 mA, P,fi2.0
-
dBc
W, F=1.78,1.85,1.90 GHz
V,,=25 V, I,,=25 mA, P,,,=2.0 W PEP, F=1850 MHz,AF=lOO kHz
Typical Optimum Device impedances
F(GHz)
Z,,(Q)
ZLmP)
1.78
1.85
1.90
6.6+jlO.O
8.4+jlO.l
9.5 + j9.9
6.O+j12.0
5.7+jll.O
5.0 + j9.0
1
2
3
4
