Wireless Bipolar Power Transistor,
1.6 - 1.7 GHz
Features
l
l
l
l
l
l
2W
PH1617-2
v2.00
Designed for Linear Amplifier Applications
Class AB:
-33
dBc Typ 3rd IMD at 2 Watts PEP
Class A: +44 dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting
Absolute Maximum Ratings at 25擄C
Parameter
( Symbol
(
Rating
Units
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
1 StorageTemperature
Thermal Resistance
I
VCBO
V ES
V
EBO
鈥榗
PO
T,
TSTG
6JC
6.5
65
3.0
V
V
V
I
A
W
.0601003
(1.5.?%08)
2.0
13.5
200
1 -55to+150
13
1
鈥淐
鈥淐
鈥淐NV
UNLESS
DTHERvIsE
NOTED,
TDLER*NCES
ARE
1
Electrical Characteristics
Parameter
at 25擄C
Symbol
Min
Max
Units
Test Conditions
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Collector-EmitterBreakdownVoltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
3rd Order IMD
(
BV,-,
鈥楨S
BV,,,
BV,,,
BVEBO
65
-
1.0
V
mA
1
V
V
/
V
I,=5 mA
V,,=25 V
1 I,=5 mA
I,=5 mA, R,,=220Q
I,=5 mA
V,,&
V, I,=200 mA
GHz
(
22
30
(
-
-
3.0
15
10
35
10
I
-
120
-
-
-
5:l
hFE
GP
鈥渞lC
-
dB
%
dB
-
dBc
V,,=25 V, lo=25 mA, Po,,=2.0 W, F=l.60,1.65.1.70
V,,=25 V, I,,=25 mA, P,,,=2.0 W, F=l.60, 1.65. 1.70 GHz
V,,=25 V, I,,=25 mA, P,,=2.0 W, F=l.60.1.65,1.70
V,,=25 V, I,,=25 mA, P,,e2.0
W, F=l.60,1.65,
GHz
RL
VSWR-T
IMD,
-
-
1.70 GHr
-32
V,,=25 V, I,,=25 mA, Po,=2.0 W, PEP F=l650 MHz. AF=lOO kHz
Typical Optimum Device Impedances