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=_

F鈥橢

an

AMP

company

Wireless Bipolar Power Transistor,

1.45 - 1.60 GHz

Features

l

l

l

l

l

l

1OW

PHl516-10

v2.00

IzS

Designed for Cellular Base Station Applications

Class AB:

-33

dBc Typ 3rd IMD at 10 Watts PEP

Class A:

+49

dBm Typ 3rd Order Intercept Point

Common Emitter Configuration

Internal Input Impedance Matching

Diffused Emitter Ballasting

Absolute Maximum Ratings at 25擄C

UNLESS

UTHERVISE

NOTED,

TOLERANCES

ARE

INCHES

<umERS

MO5

t13Mn,

Electrical Characteristics

at 25擄C

DC Forward Current Gain

Power Gain

Collector Eff iciency

Input Return Loss

Load Mismatch

Tolerance

3rd Order IMD

h

FE

GP

%

15

10

40

10

120

-

-

-

3.011

-30

-

dB

%

dB

-

dBc

V,,=5 V, I,=1 A

V,,=25

V,,=25

V,,=25

V,,=25

V,,=25

V, I,,=100

V, I,,=100

mA, POUT=1 W, F=l.50

0

mA, P,*lO

- 1.60

GHz

W, F=l SO - 1.60

GHz

W, F=l.50

W, F=l.50

- 1.60 GHz

- 1.60

GHz

RL

V, I,,=1 00 mA, P,,=lO

V. l,glOO

V, I,,=100

mA, P,,,=lO

mA, P,+O

VSWR

IMD,

-

-

W PEP F=1500 MHz, AF=lOO kHz

Typical Device Impedances

F&Hz)

1.50

1.55

1.60

q.J(Q)

1.4 + j4.8

2.0 + j5.0

2.5 + j4.9

r

z LO4D

Specifications

Subject

to Change

Without

Notice.

9-150

North America:

Tel. (800) 366-2266

Fax (800) 618-8883

m Asia/Pacific:

Tel. +81 (03) 3226-1671

Fax +81 (03) 3226-1451

n

M/A-COM,

Europe:

Inc.

Tel. i-44 (1344) 869 595

Fax +44 (1344) 300 020

next

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