an
AMP
comDanv
=7
=
E
Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty
PH1214-4M
1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25擄C
f
_ .137* 919
~ (3.~8S.25)
I
1
.004=.001
(.10+.03)
UNLESS
O-HERW:SE
NOTED.
TLERANCES
ARE
INCHES
(M!LL,METERS
=.005'
~,13MM)
Electrical Characteristics
Parameter
at 25擄C
Symbol
Min
Max
Units
Test Conditions
Collector-Emitter
Collector-Emitter
Breakdown Voltage
Leakage Current
BV,,,
ICES
R THUCI
P OUT
G.
I
sic
RL
VSWR-T
VSWR-S
I
65
-
1.0
8.6
V
mA
鈥淐IW
W
dB
I
%
dB
-
-
I,=8 mA
vo=40
V,,=28
V,,=28
V,,=28
1 V,,=28
V,,t28
V,,=28
V,,=28
v
V, P,,=800
mW, F=l.20,1.30,
1.40 GHz
GHz
1.40 GHz
1.40 GHz
GHz
GHz
GHz
Thermal Resistance
Output Power
Power Gain
1 Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stablility
4.0
7.0
45
6
-
-
I
-
-
-
-
3:l
1.51
V, P,,=800 mW, F=l.20,1.30,1.40
V, P,.,=800 mW, F=l.20,1.30,
V, P,,=800 mW, F=l.20,1.30,
V, P,,=800 mW, F=1.20,1.30,1.40
V, P,,=800
mW, Fc1.20,
1.30,1.40
I
V, P,,=800 mW, F=l.20,1.30,1.40
Broadband Test Fixture Impedances
F(GHz)
1.20
1.30
TEST
FIXTLiRE
OUTPUT
Z,,(Q)
Z,,(Q)
CIRCK-
-
I
-
鈥?/div>
-
EIRZUIT
7.0 - j4.5
6.4 - j3.0
6.0 - jl.5
12.0 + j24
12.5+j21
10.5 + j24
-
6
-
5052
-
ZDF
50R t
I
ZIF鈥?/div>
1.40
-
Specifications
Subject to Change Without Notice.
9-118
Noti
America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
M/A-COM,
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Inc.
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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