Radar Pulsed Power Transistor, 300 Watts,
1.20-1.40 GHz, 150
碌S
Pulse, 10% Duty
12/06/01
Rev. 0
PH1214-300M
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
Absolute Maximum Ratings @ 25 擄C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +45 擄C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
T
STG
T
j
Rating
90
3.0
21.0
620
-65 to +200
200
Units
V
V
A
W
擄C
擄C
Electrical Characteristics @ 25 擄C
Parameter
Collector-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Symbol
BV
CES
I
CES
R
TH(JC)
P
O
G
P
Min.
90
-
-
300
8.75
50
10
-
-
Max.
-
10
.25
-
-
-
-
2:1
1.5:1
Units
V
mA
擄C/W
W
dB
%
dB
-
-
I
C
=80 mA
V
CE
=40 V
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Test Conditions
畏
RL
VSWR-T
VSWR-S
1
2
3
4
