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Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty
PHI 214-0.851
1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power Transistor
Common Emitter Configuration
Broadband Class A Operation
Matrix Geometry
Diffused Emirter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic~MetalKeramic
Package
Absolute Maximum Ratings at 25擄C
Parameter
Symbol
Rating
27
20
3.5
Units
t------T')JFH!T-T.J
V
V
V
mA
W
I
鈥淐
鈥淐
鈥?
I
.3?>= 310
C9.>3Z.>3)
I
I
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-BaseVoltage
Collector Current (Peak)
Total Power Dissipation
JunctionTemperature
Storage Temperature
(
!
VCES
v CEO
VES0
鈥榗
P7-7
T,
T STG
I
,137~4::
~BZ.15)
710
7.8
.004z.051
(
200
-65
to
+200
I
Electrical Characteristics
at 25擄C
UL-鈥楽S
7-ERW!SE
NDTCD,
-JL鈥橰ANCES
AXE
INCifS
=035鈥?/div>
CM:LLlHEiE?S
=.:3!4M)
I
I
V,,,=22, V,,(typ)=l 1.5,l,,(typ)=ZOO mA
__
_-
-
%
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stablility
%
RL
VSWR-T
VSWR-S
30
~,,=100mW, F=l.ZO, 1.30, 1.40GI-l~
I
9
-
-
-
2:l
dB
-
1.51
-
Broadband Test Fixture Impedances
-fST
F!XTLIRT
ZIRCUIT
I
F(GHz)
Z,,(Q)
ZOF&v
1.20
1.30
1.40
5.9 - j4.5
6.4 -
j4.0
7.4 +
j6.3
7.5 +
j7.7
7.4 +
j8.9
-
5sn
A
-
I-
ZiF.
7.1 - j4.4
Specifications Subject to Change Without Notice.
9-112
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
MIA-COM,
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Inc.
Europe:
Tel.
~44
(1344)
869 595
Fax t44
(1344) 300 020
1
2
