Avionics Pulsed Power Transistor, 700 Watts,
12/10/01
1.03-1.09 GHz, 32
碌S
Pulse, 2% Duty
Rev. 0
PH1090-700B
Features
Designed for Mode-S IFF Applications
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings @ 25 擄C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Dissipated Power
(Standard Pulse Cond.)
Dissipated Power
(Mode-S Pulse Train)
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
P
TOT
T
STG
T
j
Rating
65
3.0
35
2.9
700
-65 to +200
200
Units
V
V
A
kW
W
擄C
擄C
Outline Drawing
Broadband Test Fixture Impedances
F (GHz)
TEST FIXTURE
INPUT
CIRCUIT
50鈩?/div>
Z IF
TEST FIXTURE
OUTPUT
CIRCUIT
Z OF
50鈩?/div>
Z
IF
(鈩?
Z
OF
(鈩?
1.03
1.06
1.09
1.1 鈥搄1.4
1.1 鈥搄1.2
1.0 鈥搄1.0
1.2 鈥搄0.8
1.0 鈥搄0.7
0.8 鈥搄0.7
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