I
.--
-em
_--
an
AMP
company
Linear Power Transistor, 40W
850
- 1450 MHz
Features
l
l
l
l
l
l
l
l
NPN Silicon Microwave Power Transistor
Common Emitter Configuration
Broadband Class AB Operation
Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Absolute鈥榯iaximum
I Parameter
1 Collector-BaseVoltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
junction Temperature
Storage Temperature
Thermal Resistance
(
Ratinas at 25擄C
/ Symbol (
V,,,
VEs
V
EBO
鈥榗
PTO:
TJ
T ST0
8JC
1
Rating
56
56
3.0
5.6
175
200
-55 to +200
1.0
1 Units
I
v
V
v
A
W
鈥淐
鈥淐
鈥淐l-W
UNLESS
CT-IERVISE
NOTED.
TCLERANCES
ARE
1
I
it
.060鈥?002
(1521.05)
f
:NCH~:S ZOO5
:M!, LIHETERS
T,13MM,
-
Electrical Characteristics
I Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Input Power
CollectorCurrent
Input Return Loss
Saturated Output Power
Load Mismatch Tolerance
Load Mismatch Tolerance
at 25擄C
( Symbol
BV,,,
ICES
BV,,,
BvEBO
1 Min
56
1 Max 1 Units 1
-
5.0
V
mA
V
V
-
w
A
I,=50 mA
v,,=2a v
I,=50 mA
I,=1 0 mA
V,,=5.0 V, 1,=0.5 A
Test Conditions
56
3.0
15
5.5
-
-
-
100
8.8
3.75
h
FE
P,N
鈥榗
RL
PST
VSWR-T
VSWR-T
V,,=28 V, I,,=12 mA, PO,,=42 W, F=1450 MHz
V,,=28 V, I&
2 mA, PO,?42 W, F=l450 MHz
-
-
Typical Optimum Device Impedances
F(MHz)
850
z,(n)
950
1050
1150
1250
1350
1450
Specifications Subject
2.0 - j3.6
2.4 - j2.5
3.1 - il.8
3.5 - il.9
3.3 - j2.4
2.5 - j2.4
1.7-j1.8
to
Change Without
1.4 - j0.5
1.2-jO.l
Notice.
1
