an
AMP
company
CW Power Transistor,
30 - 400 MHz
Features
NPN Silicon Power Transistor
Common Emitter Configuration
Class AB Broadband Operation
16
Watt PEP Output
Diffused Emitter Ballasting Resistors
Gold Metallization System
Prqqn in Thousands of ARC-182 Airborne Radios
16W
PHOI 04-I 6
Absolute Maximum Ratings at 25擄C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation
1 JunctionTemperature
Storage Temperature
Thermal Resistance
1
Symbol
VCES
VES0
鈥榗
P*
T,
Ts-r0
eJC
\
Rating
65
4.0
2
63
200
-4oto+125
2.1
I
Units
V
V
A
W
鈥淐
鈥淐
鈥淐l-W
UNLfSS
37HERWISE
NOT3
TOLERANXS
ARE
INCHES
(F(ILLI~ETERS
S.OOS
=,13Hr)
I
Electrical Characteristics at 25擄C
Parameter
Collector-Emitter Breakdown Voltage
Base-Emitter Breakdown Voltage
Collector-Emitter Leakaoe
Current
DC Forward Current Gain
Input Power
Power Gain
_ Coilector Efficiency
Input Return Loss
Load Mismatch Tolerance
Symbol
BV,,,
BVEoO
IA-c
Min
65
4.0
Max
-
Units
V
V
I,=5 mA, V,,=O.O V
1,=2.5 mA, I,=O.OA
v-,=30 v
V,,=5.0 V. I,=500 mA
lest Conditions
1
mA
-
w
dB
%
dB
-
hFE
PIN
GP
?C
20
鈥?-
9.0
40
9
-
鈥?/div>
Bo
2.0
-
-
-
3:l
V,,=27 V, I,,=10 mA, PO,=16 W, F=400 MHz
V,,=27 V, I,,=1 0 mA, POUT=1W, F=400 MHz
6
V,,=27 V, I,,=1 0 mA, P,,$6
V,,=27 V, I,=1 0 mA, Poti
V,,=27 V, I,,=10 mA, P,&6
W, F=400 MHz
W, F=400 MHz
W, F=400 MHz
RL
VSWR-T
Specifications Subject to Change Without Notice.
1
