SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03DXTEV
TVS Diode Array for ESD
Protection in Portable Electronics
B
FEATURES
ESD Protection: IEC 61000-4-2 Level 4.
MILSTD883C-Method 3015-6:Class 3
A1
A
B1
DIM
A
1
5
C
A1
B
B1
C
D
H
J
P
P
P
Four separate unidirectional configurations for protection
Low leakage current<1 A @3Volts
Low capacitance
Complies to USB 1.1 low speed & high speed specifications
2
D
3
4
MILLIMETERS
_
1.6 + 0.05
_ 0.05
1.0 +
_
1.6 + 0.05
_ 0.05
1.2+
0.50
_
0.2 + 0.05
_ 0.05
0.5 +
_
0.12 + 0.05
5
H
C
J
APPLICATIONS
Cell phone handsets and accessories.
Cordless phones.
Personal digital assistants (PDA s)
Notebooks, desktopsPC, & servers.
Portable instrumentation.
Set-Top Box, DVD Player.
Digital Camera.
1. (TVS) D1 CATHODE
2. COMMON ANODE
3. (TVS) D2 CATHODE
4. (TVS) D3 CATHODE
5. (TVS) D4 CATHODE
TESV
Marking
5
Type Name
4
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
)
SYMBOL
P
PK
I
PP
T
j
T
stg
RATING
20
1.6
-55 150
-55 150
1
2
3
UNIT
W
A
1
TA
2
5
4
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
C
J
I
t
=1mA
V
RWM
=3V
I
PP
=1.6A, tp=8/20 s
V
R
=0V, f=1MHz
V
R
=3.0V, f=1MHz
TEST CONDITION
-
MIN.
-
5.3
-
-
-
-
TYP.
-
-
-
-
13
7.0
MAX.
3.3
5.9
1
13
17
pF
11.5
UNIT
V
V
A
V
2007. 9. 10
Revision No : 1
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