Product Specification
PE4237
Product Description
The PE4237 RF Switch is designed to cover a broad range of
applications from near DC to 4000 MHz. This reflective switch
integrates on-board CMOS control logic driven by a single-pin,
low voltage CMOS or TTL control input. Using a nominal +3-
volt power supply, a 1 dB compression point of +32 dBm can
be achieved. The PE4237 also exhibits outstanding isolation
of better than 43 dB at 1000 MHz and is
offered in a small 3x3 mm DFN package.
The PE4237 is manufactured on Peregrine鈥檚 UltraCMOS鈩?/div>
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
Figure 1. Functional Diagram
RFC
SPDT UltraCMOS鈩?RF Switch
DC - 4000 MHz
Features
鈥?/div>
Single 3.0-volt power supply
鈥?/div>
Low insertion loss: 0.35 dB at
1000 MHz, 0.45 dB at 2000 MHz
鈥?/div>
High isolation of 43 dB at 1000 MHz,
35 dB at 2000 MHz
鈥?/div>
Typical 1 dB compression point of
+32 dBm
鈥?/div>
Single-pin CMOS or TTL logic control
鈥?/div>
Available in a 6-lead DFN package
Figure 2. Package Type
6-lead DFN
RF1
RF2
CMOS
Control
Driver
CTRL
Table 1. Electrical Specifications @ +25 擄C, V
DD
= 3 V
(ZS = ZL = 50
鈩?
Parameter
Operation Frequency
1
Insertion Loss
Isolation 鈥?RFC to RF1/RF2
Isolation 鈥?RF1 to RF2
Return Loss
鈥極N鈥?Switching Time
鈥極FF鈥?Switching Time
Video Feedthrough
2
Input 1 dB Compression
Input IP3
2000 MHz
2000 MHz, 17 dBm
30
50
1000 MHz
2000 MHz
1000 MHz
2000 MHz
1000 MHz
2000 MHz
1000 MHz
2000 MHz
50% CTRL to 0.1 dB final value, 2 GHz
50% CTRL to 25 dB isolation, 2 GHz
41
33
33.5
26.5
19
10.5
Conditions
Minimum
DC
Typical
0.35
0.45
43
35
35
28
24
14
200
90
15
32
Maximum
4000
0.50
0.60
Units
MHz
dB
dB
dB
dB
dB
dB
dB
dB
ns
ns
mV
pp
dBm
dBm
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to
High or High to Low in a 50
鈩?/div>
test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.
Document No. 70-0071-05
鈹?/div>
www.psemi.com
漏2003-2008 Peregrine Semiconductor Corp. All rights reserved.
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英文版
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TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 25MA I(C) | TO-237A...
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