UltraCMOS鈩?/div>
RF Switch is
designed to cover a broad range of applications from DC to 1.3
GHz. This single-supply reflective switch integrates on-board
CMOS control logic driven by a simple, single-pin CMOS or
TTL compatible control input. Using a nominal +3-volt power
supply, a typical input 1 dB compression point of +32 dBm can
be achieved. The PE4231 also exhibits input-output isolation of
better than 42 dB at 1.0 GHz and is offered in a small 8-lead
MSOP package.
The PE4231 SPDT High Power
UltraCMOS鈩?/div>
RF Switch is
manufactured in Peregrine鈥檚 patented Ultra Thin Silicon
(UTSi廬) CMOS process, offering the performance of GaAs with
the economy and integration of conventional CMOS.
Figure 1. Functional Diagram
RFCommon
SPDT High Power UltraCMOS鈩?/div>
DC 鈥?1.3 GHz RF Switch
Features
鈥?/div>
Optimized for 75
鈩?/div>
systems
鈥?/div>
Single +3-volt power supply
鈥?/div>
Low insertion loss: 0.80 dB at 1.0 GHz
鈥?/div>
High isolation: 42 dB at 1.0 GHz
鈥?/div>
Typical input 1 dB compression point of
+32 dBm
鈥?/div>
Single-pin CMOS or TTL logic control
鈥?/div>
Low cost
Figure 2. Package Type
8-lead MSOP
RF1
RF2
CMOS
Control
Driver
CTRL
Table 1. Electrical Specifications @ +25 擄C, V
DD
= 3 V
(Z
S
= Z
L
= 75
鈩?/div>
)
Parameter
Operation Frequency
1
Insertion Loss
Isolation 鈥?RFCommon to
RF1/RF2
Isolation 鈥?RF1 to RF2
Return Loss
鈥極N鈥?Switching Time
鈥極FF鈥?Switching Time
Video Feedthrough
2
Input 1 dB Compression
3
Input IP3
3
Notes:
1000 MHz
1000 MHz, 17 dBm
30
50
50 MHz
1000 MHz
50 MHz
1000 MHz
50 MHz
1000 MHz
1000 MHz
CTRL to 0.1 dB final value, 2 GHz
CTRL to 25 dB isolation, 2 GHz
73
40
58
33
16
Conditions
Minimum
DC
Typical
0.50
0.80
75
42
60
35
17
2000
900
15
32
Maximum
1300
0.60
0.90
Units
MHz
dB
dB
dB
dB
ns
ns
mV
pp
dBm
dBm
1. Device linearity will begin to degrade below 1 MHz.
2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth.
3. Measured in a 50
鈩?/div>
system.
漏2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 7
Document No. 70-0097-01
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