GaAlAs High power IR LED Emitters
(660nm/905nm)
PDI-E832
PACKAGE DIMENSIONS INCH [mm]
.167 [4.24]
C
L
.104 [2.64]
C
L
RED L.E.D. CHIP
I.R. L.E.D. CHIP
.060 [1.52]
C
L
WIRE BONDS
METALIZED
CERAMIC
.055 [1.40]
.025 [0.64]
.063 [1.60]
.250 [6.35]
ENCAPSOLATE
CONTACT B
CONTACT A
Metalized Ceramic Package
FEATURES
鈥?Low Cost
鈥?660 nm +/- 3nm
鈥?2 drive line
DESCRIPTION
The
PDI-E832
is a two drive line dual emitter
oximeter component. The 660 and 905 nm GaAlAs
infrared emitters are mounted in a glob toped. The
LEDs are bias separately by alternating polarity on
the bias pins.
UNITS
mW
mA
mA
V
擄C
擄C
擄C
APPLICATIONS
鈥?Oximeter Probes
鈥?Finger Clamps
鈥?Reusable probes
ABSOLUTE MAXIMUM RATING
(TA)= 23擄C UNLESS OTHERWISE NOTED
SYMBOL PARAMETER
P
d
I
f
I
p
V
r
T
STG
T
O
T
S
Power Dissipation
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
-40
-40
MIN
MAX
250
30
200
4
+80
+80
+240
SCHEMATIC
A
660 nm
LED
905 nm
LED
B
* For 3 seconds max using a heat sink
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23擄C UNLESS OTHERWISE NOTED
SYMBOL
P
o
Iv
V
f
l
p
CHARACTERISTIC
Radiant Flux
Luminous Intensity
Forward Voltage
Peak Wavelength
Spectral Halfwidth
Rise Time
Fall Time
TEST CONDITIONS
I
f
= 20 mA
I
f
= 20 mA
I
f
= 20 mA
I
f
= 20 mA
I
f
= 20 mA
I
f
= 20 mA
I
f
= 20 mA
660 nm
MIN TYP MAX
1.8
2.4
20
30
1.8
2.4
658
661
664
25
0.1
0.04
905 nm
MIN TYP MAX
1.2 1.8
1.2
905
50
1.4
0.7
1.5
915
UNITS
mW
mcd
V
nm
nm
uS
uS
895
螖
l
t
r
t
f
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 鈥?Phone (805) 987-0146 鈥?Fax (805) 484-9935 鈥?/div>
www.advancedphotonix.com
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