GaAlAs High power IR LED Emitters
PDI-E813
PACKAGE DIMENSIONS INCH [mm]
.045 [1.1]
.030 [0.8]
C
L
45擄
脴.188 [4.8]
C
L 脴.180 [4.6]
.047 [1.2]
.035 [0.9]
.257 [6.5]
.223 [5.7]
WINDOW CAP
(WELDED)
.015 [0.38] MAX
HEADER
脴.019 [0.5] TYP
C
L
CATHODE .100 [2.54]
C
L
ANODE & CASE
脴.215 [5.5]
脴.207 [5.3]
880 nm LED CHIP
.019 [0.48]
.028 [0.7] MAX
2X 1.000 [25.4]
.214 [5.4]
.192 [4.9]
CATHODE
TO-46 CAN PACKAGE
CHIP DIMENSIONS INCH [mm]
FEATURES
鈥?High output power
鈥?High reliability
鈥?Medium emission angle
DESCRIPTION
The
PDI-E813
is a high power GaAlAs infrared
emitter, packaged in a hermetic TO-46 metal header
with a dome window glass.
APPLICATIONS
鈥?Photoelectric switches
鈥?Infrared sources
鈥?Optical readers
ABSOLUTE MAXIMUM RATING
(TA)= 23擄C UNLESS OTHERWISE NOTED
SYMBOL PARAMETER
P
d
I
f
I
p
V
r
T
STG
T
O
T
S
Power Dissipation
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
-55
-55
MIN
MAX
360
180
3.0
3
+125
+125
+240
UNITS
mW
mA
A
V
擄C
擄C
擄C
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23擄C UNLESS OTHERWISE NOTED
SYMBOL
P
o
V
f
Ir
l
p
CHARACTERISTIC
Output Power
Forward Voltage
Reverse current
Peak Wavelength
Spectral Halfwidth
Dynamic Resistance
Rise Time
Fall Time
TEST CONDITIONS
I
f
= 100 mA
I
f
= 100 mA
Vr = -3V
I
f
= 50 mA
I
f
= 50 mA
I
f
= 100mA
I
f
= 20 mA
I
f
= 20 mA
MIN
7.0
TYP
15
1.5
880
80
1.2
0.6
0.5
MAX
1.9
10
895
UNITS
mW
V
uA
nm
nm
Ohms
uS
uS
865
螖
l
R
d
t
r
t
f
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 鈥?Phone (805) 987-0146 鈥?Fax (805) 484-9935 鈥?/div>
www.advancedphotonix.com
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